Features: • Floating channel designed for bootstrap operation• Fully operational up to +200 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 V to 20 V• Independent low-side and high-side channels• Input logic HIN/LIN activ...
IRS2011: Features: • Floating channel designed for bootstrap operation• Fully operational up to +200 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range f...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Symbol | Definition |
Min. |
Max. |
Units | |
VB VS VHO VCC VLO VIN |
High-side floating supply voltage High-side floating supply offset voltage High-side floating output voltage Low-side fixed supply voltage Low-side output voltage Logic input voltage (HIN & LIN) |
-0.3 VB - 20 VS - 0.3 -0.3 -0.3 -0.3 |
220 (Note 1) VB + 0.3 VB + 0.3 20 (Note 1) VCC +0.3 VCC +0.3 |
V | |
dVs/dt | Allowable offset supply voltage transient (Fig. 2) |
- |
50 |
V/ns | |
PD | Package power dissipation @ TA = +25 | (8-lead DIP) (8-lead SOIC) |
- - |
1.0 0.625 |
W |
RTHJA | Thermal resistance, junction to ambient | (8-lead DIP) (8-lead SOIC) |
- - |
125 200 |
/W |
TJ TS TL |
Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) |
- -55 - |
150 150 300 |
Description The IRS2011 is a high power, high speed power MOSFET driver with independent high and low-side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an Nchannel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.