Power Driver ICs
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Product : | Half-Bridge Drivers | Type : | High and Low Side | ||
Rise Time : | 170 ns | Fall Time : | 90 ns | ||
Supply Voltage - Max : | 20 V | Supply Voltage - Min : | 10 V | ||
Supply Current : | 0.27 mA | Maximum Power Dissipation : | 625 mW | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage arameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol | Definition | Min. | Max. | Units | |
VB | High-side floating absolute voltage | -0.3 | 225 | V | |
VS | High-side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
VHO | High-side floating output voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low-side and logic fixed supply voltage | -0.3 | 25 | ||
VLO | Low-side output voltage | -0.3 | VCC + 0.3 | ||
VIN | Logic input voltage (HIN & LIN) | -0.3 | VCC + 0.3 | ||
dVs/dt | Allowable offset supply voltage transient | - | 50 | V/ns | |
PD | Package power dissipation @ TA +25 | (8 Lead PDIP) | - | 1.0 | W |
(8 Lead SOIC) | - | 0.625 | |||
RthJA | Thermal resistance, junction to ambient | (8 Lead PDIP) | - | 125 | /W |
(8 Lead SOIC) | - | 200 | |||
TJ | Junction temperature | - | 150 | ||
TS | Storage temperature | -55 | 150 | ||
TL | Lead temperature (soldering, 10 seconds) | - | 300 |
The IRS2003 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver rossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200 V.
Technical/Catalog Information | IRS2003SPBF |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Configuration | Half Bridge |
Voltage - Supply | 10 V ~ 20 V |
Current - Peak | 290mA |
Delay Time | 680ns |
Package / Case | 8-SOIC (3.9mm Width) |
Packaging | Tube |
Number of Outputs | 2 |
Input Type | Inverting and Non-Inverting |
Number of Configurations | 1 |
Operating Temperature | -40°C ~ 125°C |
High Side Voltage - Max (Bootstrap) | 200V |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRS2003SPBF IRS2003SPBF |