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IRS2003STRPBF, IRS2004, IRS2011

Table of contents:
Info of IRS2003STRPBF
Info of IRS2004
Info of IRS2011

IRS2003STRPBF, IRS2004, IRS2011 Selling Leads, Datasheet

MFG:International Rectifier (VA) Category:Integrated Circuits (ICs) Package Cooled:05+ D/C:09+

IRS2003STRPBF, IRS2004, IRS2011 Datasheet download

Five Points

Part Number: IRS2003STRPBF

Category: Integrated Circuits (ICs)

MFG: International Rectifier (VA)

Package Cooled: 05+

D/C: 09+

Description: IC DRIVER HALF-BRIDGE 8-SOIC

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IRS2003STRPBF Parameters

Technical/Catalog Information	IRS2003STRPBF
Vendor	International Rectifier (VA)
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 20 V
Current - Peak	290mA
Delay Time	680ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Cut Tape (CT)
Number of Outputs	2
Input Type	Inverting and Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	200V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRS2003STRPBF IRS2003STRPBF IRS2003STRPBFCT ND IRS2003STRPBFCTND IRS2003STRPBFCT

IRS2004 General Description

The IRS2004 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and lowside referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 V to 200 V.

IRS2004 Maximum Ratings

Symbol	Definition		Min.	Max.	Units
V_B	High-side floating absolute voltage		-0.3	225	V
V_S	High-side floating supply offset voltage		V_B - 25	V_B + 0.3
V_HO	High-side floating output voltage		V_S - 0.3	V_B + 0.3
V_CC	Low-side and logic fixed supply voltage		-0.3	25
V_LO	Low-side output voltage		-0.3	V_CC + 0.3
V_IN	Logic input voltage (IN & SD )		-0.3	V_CC + 0.3
d_Vs/dt	Allowable offset supply voltage transient		-	50	V/ns
P_D	Package power dissipation @ T_A +25	8 lead PDIP)	-	1.0	W
P_D	Package power dissipation @ T_A +25	(8 lead SOIC)	-	0.625	W
R_thJA	Thermal resistance, junction to ambient	(8 lead PDIP)	-	125	/W
R_thJA	Thermal resistance, junction to ambient	(8 lead SOIC)	-	200	/W
T_J	Junction temperature		-	150
T_S	Storage temperature		-55	150
T_L	Lead temperature (soldering, 10 seconds)		-	300

IRS2004 Features

• Floating channel designed for bootstrap operation
• Fully operational to +200 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High-side output in phase with input
• Shutdown input turns off both channels
• Matched propagation delay for both channels
• RoHS compliant

IRS2011 General Description

Description The IRS2011 is a high power, high speed power MOSFET driver with independent high and low-side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an Nchannel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

IRS2011 Maximum Ratings

Symbol	Definition		Min.	Max.	Units
V_BV_SV_HO V_CC V_LOV_IN	High-side floating supply voltage High-side floating supply offset voltage High-side floating output voltage Low-side fixed supply voltage Low-side output voltage Logic input voltage (HIN & LIN)		-0.3 V_B - 20 V_S - 0.3 -0.3 -0.3 -0.3	220 (Note 1) V_B + 0.3 V_B + 0.3 20 (Note 1) V_CC +0.3 V_CC +0.3	V
dVs/dt	Allowable offset supply voltage transient (Fig. 2)		-	50	V/ns
P_D	Package power dissipation @ T_A = +25	(8-lead DIP) (8-lead SOIC)	- -	1.0 0.625	W
R_THJA	Thermal resistance, junction to ambient	(8-lead DIP) (8-lead SOIC)	- -	125 200	/W
T_JT_ST_L	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)		- -55 -	150 150 300

Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.

IRS2011 Features

• Floating channel designed for bootstrap operation
• Fully operational up to +200 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Independent low-side and high-side channels
• Input logic HIN/LIN active high
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• RoHS compliant

IRS2011 Typical Application

• Audio Class D amplifiers
• High power DC-DC SMPS converters
• DC motor drive

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