MFG:International Rectifier (VA) Category:Integrated Circuits (ICs) Package Cooled:SOP8 D/C:0731+
IRS2181STRPBF, IRS2183, IRS21834S Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier (VA)
Package Cooled: SOP8
D/C: 0731+
Description: IC DRIVER HI/LO SIDE 600V 8-SOIC
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PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRS2181STRPBF |
| Vendor | International Rectifier (VA) |
| Category | Integrated Circuits (ICs) |
| Configuration | High and Low Side, Independent |
| Voltage - Supply | 10 V ~ 20 V |
| Current - Peak | 1.9A |
| Delay Time | 180ns |
| Package / Case | 8-SOIC (3.9mm Width) |
| Packaging | Cut Tape (CT) |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRS2181STRPBF IRS2181STRPBF IRS2181STRPBFCT ND IRS2181STRPBFCTND IRS2181STRPBFCT |
The IRS2183/IRS21834 are high voltage,high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
|
Symbol |
Definition |
Min. |
Max. |
Unit | |
|
VB |
High side floating absolute voltage |
-0.3 |
620 (Note 1) |
V | |
|
VS |
High side floating supply offset voltage |
VB - 20 |
VB + 0.3 | ||
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | ||
|
VCC |
Low side and logic fixed supply voltage |
-0.3 |
20 (Note 1) | ||
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | ||
|
DT |
Programmable deadtime pin voltage (IR21834 only) |
VSS - 0.3 |
VCC + 0.3 | ||
|
VIN |
Logic input voltage (HIN & LIN) |
VSS - 0.3 |
VCC + 0.3 | ||
|
VSS |
Logic ground (IR21834 only) |
VCC - 20 |
VCC + 0.3 | ||
|
dVS/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns | |
|
PD |
Package power dissipation @ TA +25 | (8-lead PDIP) |
- |
1.0 |
W |
| (8-lead SOIC) |
0.625 | ||||
| (14-lead PDIP) |
1.6 | ||||
| (14-lead SOIC) |
1.0 | ||||
|
RthJA |
Thermal resistance, junction to ambient | (8-lead PDIP) |
- |
125 |
/W |
| (8-lead SOIC) |
200 | ||||
| (14-lead PDIP) |
75 | ||||
| (14-lead SOIC) |
120 | ||||
|
TJ |
Junction temperature |
- |
150 |
||
|
TS |
Storage temperature |
-50 |
150 | ||
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 | ||
The IRS2183/IRS21834 are high voltage,high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
|
Symbol |
Definition |
Min. |
Max. |
Unit | |
|
VB |
High side floating absolute voltage |
-0.3 |
620 (Note 1) |
V | |
|
VS |
High side floating supply offset voltage |
VB - 20 |
VB + 0.3 | ||
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | ||
|
VCC |
Low side and logic fixed supply voltage |
-0.3 |
20 (Note 1) | ||
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | ||
|
DT |
Programmable deadtime pin voltage (IR21834 only) |
VSS - 0.3 |
VCC + 0.3 | ||
|
VIN |
Logic input voltage (HIN & LIN) |
VSS - 0.3 |
VCC + 0.3 | ||
|
VSS |
Logic ground (IR21834 only) |
VCC - 20 |
VCC + 0.3 | ||
|
dVS/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns | |
|
PD |
Package power dissipation @ TA +25 | (8-lead PDIP) |
- |
1.0 |
W |
| (8-lead SOIC) |
0.625 | ||||
| (14-lead PDIP) |
1.6 | ||||
| (14-lead SOIC) |
1.0 | ||||
|
RthJA |
Thermal resistance, junction to ambient | (8-lead PDIP) |
- |
125 |
/W |
| (8-lead SOIC) |
200 | ||||
| (14-lead PDIP) |
75 | ||||
| (14-lead SOIC) |
120 | ||||
|
TJ |
Junction temperature |
- |
150 |
||
|
TS |
Storage temperature |
-50 |
150 | ||
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 | ||
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