IRS2135D, IRS2135J, IRS2136 Selling Leads, Datasheet
MFG:IR Package Cooled:DIP28L D/C:0611+

IRS2135D, IRS2135J, IRS2136 Datasheet download
Part Number: IRS2135D
MFG: IR
Package Cooled: DIP28L
D/C: 0611+
MFG:IR Package Cooled:DIP28L D/C:0611+
IRS2135D, IRS2135J, IRS2136 Datasheet download
MFG: IR
Package Cooled: DIP28L
D/C: 0611+
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PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRS213(3, 5) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5 V logic. An independent operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequencies applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Zener clamps are included between VCC & COM (25 V), VCC & VSS (20V), and VBx & VSx (20 V).
Symbol |
Definition |
Min. |
Max. |
Unit | |
VB1,2,3 |
High side floating supply voltage |
-0.3 |
625 |
V | |
VS1,2,3 |
High side floating offset voltage |
VB1,2,3 - 20 |
VB1,2,3 + 0.3 | ||
VHO1,2,3 |
High side floating output voltage |
VS1,2,3 - 0.3 |
VB1,2,3 + 0.3 | ||
VCC |
Fixed supply voltage |
-0.3 |
25 | ||
VSS |
Logic ground |
VCC - 20 |
VCC + 0.3 | ||
VLO1,2,3 |
Low side output voltage |
-0.3 |
VCC + 0.3 | ||
VIN |
Logic input voltage ( HIN, LIN ITRIP, SD & FLT-CLR) |
VSS -0.3 |
VCC + 0.3 | ||
VIN,AMP |
Operational amplifier input voltage (CA+ & CA-) |
VSS -0.3 |
VCC + 0.3 | ||
VOUT,AMP |
Operational amplifier output voltage (CAO) |
VSS -0.3 |
VCC + 0.3 | ||
VFLT |
FAULT output voltage |
VSS -0.3 |
VCC + 0.3 | ||
dVS/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns | |
PD |
Package power dissipation @ TA +25 | (28 lead PDIP) |
- |
1.5 |
W |
(28 lead SOIC) |
- |
1.6 | |||
(44 lead PLCC) |
- |
2.0 | |||
Rth,JA |
Thermal resistance, junction to ambient | (28 lead PDIP) |
- |
83 |
/W |
(28 lead SOIC) |
- |
78 | |||
(44 lead PLCC) |
- |
63 | |||
TJ |
Junction temperature |
- |
150 |
||
TS |
Storage temperature |
-55 |
150 | ||
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
The IRS2136x are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3 V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Symbol | Definition | Min. | Max. | Units | |
VS | High side offset voltage | VB 1,2,3 - 20 | VB 1,2,3 + 0.3 | V | |
VB | High side floating supply voltage | -0.3 | 620 | ||
VHO1,2,3 | High side floating output voltage | VS1,2,3 - 0.3 | VB 1,2,3 + 0.3 | ||
VCC | Low side and logic fixed supply voltage | -0.3 | 20 | ||
VSS | Logic ground | VCC - 20 | VCC + 0.3 | ||
VLO1,2,3 | Low side output voltage | -0.3 | VCC + 0.3 | ||
VIN | Input voltage LIN, HIN, ITRIP, EN, RCIN | VSS -0.3 | VCC + 0.3 | ||
VFLT | FAULT output voltage | VSS -0.3 | VCC + 0.3 | ||
dV/dt | Allowable offset voltage slew rate | - | 50 | V/ns | |
PD | Package power dissipation @ TA +25 |
(28 lead PDIP) | - | 1.5 | W |
(28 lead SOIC) | - | 1.6 | |||
(44 lead PLCC) | - | 2.0 | |||
RthJA | Thermal resistance, junction to ambient |
(28 lead PDIP) | - | 83 | /W |
(28 lead SOIC) | - | 78 | |||
(44 lead PLCC) | - | 63 | |||
TJ | Junction temperature | - | 150 | ||
TS | Storage temperature | -55 | 150 | ||
TL | Lead temperature (soldering, 10 seconds) | - | 300 |