IRS2112, IRS2113-1, IRS2113-2 Selling Leads, Datasheet
MFG:IR Package Cooled:06+ D/C:DIP14
IRS2112, IRS2113-1, IRS2113-2 Datasheet download
Part Number: IRS2112
MFG: IR
Package Cooled: 06+
D/C: DIP14
MFG:IR Package Cooled:06+ D/C:DIP14
IRS2112, IRS2113-1, IRS2113-2 Datasheet download
MFG: IR
Package Cooled: 06+
D/C: DIP14
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PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRS2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Symbol | Definition | Min. | Max. | Units | |
VB | High-side floating supply voltage | -0.3 | 625 | V | |
VS | High-side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
VHO | High-side floating output voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low-side fixed supply voltage | -0.3 | 25 | ||
VLO | Low-side output voltage | -0.3 | VCC + 0.3 | ||
VDD | Logic supply voltage | -0.3 | VSS + 25 | ||
VSS | Logic supply offset voltage | VCC - 25 | VCC + 0.3 | ||
VIN | Logic input voltage (HIN, LIN & SD) | VSS - 0.3 | VDD + 0.3 | ||
dVs/dt | Allowable offset supply voltage transient (Fig. 2) | - | 50 | V/ns | |
PD | Package power dissipation @ TA +25 | (14 Lead DIP) | - | 1.6 | W |
(16 Lead SOIC) | - | 1.25 | |||
RTHJA | Thermal resistance, junction to ambient | (14 Lead DIP) | - | 75 | /W |
(16 Lead SOIC) | - | 100 | |||
TJ | Junction temperature | - | 150 | ||
TS | Storage temperature | -55 | 150 | ||
TL | Storage temperature | - | 300 |