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The IRS2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V.
IRS2101 Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High-side floating supply voltage
-0.3
625
V
VS
High-side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High-side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low-side and logic fixed supply voltage
-0.3
25
VLO
Low-side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN)
-0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 lead PDIP)
-
1.0
W
(8 lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 lead PDIP)
-
125
/W
(8 lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IRS2101 Features
• Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout • 3.3 V, 5 V, and 15 V logic input compatible • Matched propagation delay for both channels • Outputs in phase with inputs • RoHS compliant