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IR2110PBF STOCK 20 IR 2006+ 0.8357, IR2110S, IR2110S PICTURE

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Info of IR2110PBF STOCK 20 IR 2006+ 0.8357
Info of IR2110S
Info of IR2110S PICTURE

IR2110PBF STOCK 20 IR 2006+ 0.8357, IR2110S, IR2110S PICTURE Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SOIC16 D/C:09+

IR2110PBF STOCK 20 IR 2006+ 0.8357, IR2110S, IR2110S PICTURE Picture

IR2110PBF STOCK 20 IR 2006+ 0.8357, IR2110S, IR2110S PICTURE Datasheet download

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Part Number: IR2110PBF STOCK 20 IR 2006+ 0.8357

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: SOIC16

D/C: 09+

Description: IC DRIVER HIGH/LOW SIDE 16-SOIC

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IR2110S Parameters

Technical/Catalog Information	IR2110S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	2.5A
Delay Time	120ns
Package / Case	16-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	500V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2110S IR2110S

IR2110S General Description

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

IR2110S Maximum Ratings

Symbol	Definition		Min.	Max.	Units
V_B	High side floating supply voltage	(IR2110)	-0.3	525	V
V_B	High side floating supply voltage	(IR2113)	-0.3	625
V_S	High side floating supply offset voltage		VB - 25	VB + 0.3
V_HO	High side floating output voltage		VS - 0.3	VB + 0.3
V_CC	Low side fixed supply voltage		-0.3	25
V_LO	Low side output voltage		-0.3	V_CC + 0.3
V_DD	Logic supply voltage		-0.3	V_SS+ 25
V_SS	Logic supply offset voltage		V_CC - 25	V_CC + 0.3
V_IN	Logic input voltage (HIN, LIN & SD)		V_SS- 0.3	V_DD + 0.3
dVs/dt	Allowable offset supply voltage transient (figure 2)		-	50	V/ns
P_D	Package power dissipation @ TA +25	(14 lead DIP)	-	1.6	W
P_D	Package power dissipation @ TA +25	(16 lead SOIC)	-	1.25	W
R_THJA	Thermal resistance, junction to ambient	(14 lead DIP)	-	75	/W
R_THJA	Thermal resistance, junction to ambient	(16 lead SOIC)	-	100	/W
T_J	Junction temperature		-	150
T_S	Storage temperature			150
T_L	Lead temperature (soldering, 10 seconds)		-	300

IR2110S Features

• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

IR2110S Connection Diagram

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