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The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.
IR20153S Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side driver output stage voltage
-5.0
170
V
VS
High side floating supply offset voltage
- 8.0
150
VHO
Output voltage gate high connection
VS - 0.3
VB + 0.3
VCC
Low side fixed supply voltage
-0.3
25
VIN
Input voltage (IN and RESET)
-0.3
VCC +0.3
dV/dt
Allowable offset voltage slew rate
-
50
V/nsec
TJ
Junction temperature
-55
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR20153S Features
• Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 5V to 20V • Undervoltage lockout • Internal recharge FET for bootstrap refresh • Internal deadtime of 11µs and 0.8µs • CMOS Schmitt-triggered input logic • Output out of phase with input • Reset input • Split pull-up and pull-down gate drive pins • Also available LEAD-FREE (PbF)