IR2011S

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Supplier Device Package: 8-SOICN
Current - Peak: 1A
Manufacturer: International Rectifier
High Side Voltage - Max (Bootstrap): 200V
Voltage - Supply: 10 V ~ 20 V
Configuration: High and Low Side, Independent
Delay Time: 80ns


Features:

• Floating channel designed for bootstrap operation
   Fully operational up to +200V
   Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10V to 20V
• Independent low and high side channels
• Input logicHIN/LIN active high
• Undervoltage lockout for both channels
• 3.3V and 5V input logic compatible
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• 8-Lead SOIC is also available LEAD-FREE (PbF)


Pinout

Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VIN	Logic input voltage (HIN & LIN )		COM - 0.3	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient (figure 2)		-	50	V/ns
PD	Package power dissipation @ TA +25	(8 Lead PDIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RthJA	Thermal resistance, junction to ambient	(8 Lead PDIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2011S is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays of the IR2011S are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Parameters:

Technical/Catalog Information	IR2011S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	1A
Delay Time	80ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	200V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2011S IR2011S