IR2010

Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V logic compatible Separate logic supply range fr...

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SeekIC No. : 004376041 Detail

IR2010: Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V•...

floor Price/Ceiling Price

Part Number:
IR2010
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation
   Fully operational to 200V
   Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
   Separate logic supply range from 3.3V to 20V
   Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Shut down input turns off both channels
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Also available LEAD-FREE



Application

• Audio Class D amplifiers
• High power DC-DC SMPS converters
• Other high frequency applications



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min. Max. Units
VB High Side Floating Supply Voltage -0.3 225 V
VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
VHO High Side Output Voltage VS -0.3 VB + 0.3
VCC Low Side Fixed Supply Voltage
-0.3 25
VLO Low Side Output Voltage -0.3 VCC + 0.3
VDD Logic Supply Voltage -0.3 VSS + 25
VSS Logic Supply Offset Voltage VCC - 25 VCC + 0.3
VIN Logic Input Voltage (HIN, LIN & SD) VSS -0.3 VDD + 0.3
dVS/dt
Allowable Offset Supply Voltage Transient(Figure2) - 50 V/ns
PD Package Power Dissipation @ TA + 25 (14 lead DIP) - 1.6 W
(16 lead SOIC) 1.25
RthJA Thermal Resistance, Junction to Ambient (14 lead DIP) - 75 /W
(16 lead SOIC) 100
Tj Junction Temperature
- 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300



Description

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays of the IR2010 are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.




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