Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V logic compatible Separate logic supply range fr...
IR2010: Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V•...
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Symbol | Parameter | Min. | Max. | Units | |
VB | High Side Floating Supply Voltage | -0.3 | 225 | V | |
VS | High Side Floating Supply Offset Voltage | VB - 25 | VB + 0.3 | ||
VHO | High Side Output Voltage | VS -0.3 | VB + 0.3 | ||
VCC | Low Side Fixed Supply Voltage |
-0.3 | 25 | ||
VLO | Low Side Output Voltage | -0.3 | VCC + 0.3 | ||
VDD | Logic Supply Voltage | -0.3 | VSS + 25 | ||
VSS | Logic Supply Offset Voltage | VCC - 25 | VCC + 0.3 | ||
VIN | Logic Input Voltage (HIN, LIN & SD) | VSS -0.3 | VDD + 0.3 | ||
dVS/dt |
Allowable Offset Supply Voltage Transient(Figure2) | - | 50 | V/ns | |
PD | Package Power Dissipation @ TA + 25 | (14 lead DIP) | - | 1.6 | W |
(16 lead SOIC) | 1.25 | ||||
RthJA | Thermal Resistance, Junction to Ambient | (14 lead DIP) | - | 75 | /W |
(16 lead SOIC) | 100 | ||||
Tj | Junction Temperature |
- | 150 | ||
TS | Storage Temperature | -55 | 150 | ||
TL | Lead Temperature (Soldering, 10 seconds) | - | 300 |
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays of the IR2010 are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.