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IR2010(S)

Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V logic compatible Separate logic supply range fr...

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IR2010(S): Features: • Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 to 20V•...

IR2010(S) Data Sheet

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Part Number:
IR2010(S)
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible Separate logic supply range from  3.3V to 20V Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Shut down input turns off both channels
• Matched propagation delay for both channels
• Outputs in phase with inputs


Application

• Audio Class D amplifiers
• High power DC-DC SMPS converters
• Other high frequency applications


Specifications

Symbol
 Definition
Min.
Max.
Units
VB
 High side floating supply voltage
-0.3
225
V
VS
 High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
 High side floating output voltage
VB - 25
VB + 0.3
VCC
 Low side fixed supply voltage
-0.3
25
VLO
 Low side output voltage
-0.3
VCC + 0.3
VDD
 Logic supply voltage
-0.3
VSS + 25
VSS
 Logic supply offset voltage
VCC - 25
VCC + 0.3
VIN
 N Logic input voltage (HIN, LIN & SD)
VSS - 0.3
VDD + 0.3
dVs/dt
 Allowable offset supply voltage transient (figure 2)
-
50
V/ns
PD

Package power dissipation @ TA +25°C             (14 lead DIP)
-
1.6
W

(16 lead SOIC)
-
1.25
RTHJA
 Thermal resistance, junction to ambient (14 lead DIP)
-
75
°C/W

(16 lead SOIC)
-
100
TJ
 Junction temperature
-
150
°C
TS
 TS Storage temperature
-55
150
TL
 Lead temperature (soldering, 10 seconds)
-
300



Description

The  IR2010(S) is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications.  Logic inputs of the IR2010(S) are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.  Propagation de-lays are matched to simplify use in high frequency applications.  The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configura-tion which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech-nologies enable ruggedized monolithic construction.




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