Features: • Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 5V to 20V• Undervoltage lockout• Internal recharge FET for bootstrap refresh• Internal deadti...
IR20153S: Features: • Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 5V to 20V...
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Symbol | Definition | Min. | Max. | Units |
VB | High side driver output stage voltage | -5.0 | 170 | V |
VS | High side floating supply offset voltage | - 8.0 | 150 | |
VHO | Output voltage gate high connection | VS - 0.3 | VB + 0.3 | |
VCC | Low side fixed supply voltage | -0.3 | 25 | |
VIN | Input voltage (IN and RESET) | -0.3 | VCC +0.3 | |
dV/dt | Allowable offset voltage slew rate | - | 50 | V/nsec |
TJ | Junction temperature | -55 | 150 | |
TS |
Storage temperature | -55 | 150 | |
TL | Lead temperature (soldering, 10 seconds) | - | 300 |
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel of the IR20153S can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.