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The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
IR2011 Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN )
COM - 0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient (figure 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 Lead PDIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead PDIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2011 Features
• Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10V to 20V • Independent low and high side channels • Input logicHIN/LIN active high • Undervoltage lockout for both channels • 3.3V and 5V input logic compatible • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • 8-Lead SOIC is also available LEAD-FREE (PbF)
IR2011 Connection Diagram
IR2011PBF Parameters
Technical/Catalog Information
IR2011PBF
Vendor
International Rectifier
Category
Integrated Circuits (ICs)
Configuration
High and Low Side, Independent
Voltage - Supply
10 V ~ 20 V
Current - Peak
1A
Delay Time
80ns
Package / Case
8-DIP
Packaging
Tube
Number of Outputs
2
Input Type
Non-Inverting
Number of Configurations
1
Operating Temperature
-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)
200V
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IR2011PBF IR2011PBF
IR2011S Parameters
Technical/Catalog Information
IR2011S
Vendor
International Rectifier
Category
Integrated Circuits (ICs)
Configuration
High and Low Side, Independent
Voltage - Supply
10 V ~ 20 V
Current - Peak
1A
Delay Time
80ns
Package / Case
8-SOIC (3.9mm Width)
Packaging
Tube
Number of Outputs
2
Input Type
Non-Inverting
Number of Configurations
1
Operating Temperature
-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)
200V
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IR2011S IR2011S
IR2011S General Description
The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
IR2011S Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN )
COM - 0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient (figure 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 Lead PDIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead PDIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2011S Features
• Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10V to 20V • Independent low and high side channels • Input logicHIN/LIN active high • Undervoltage lockout for both channels • 3.3V and 5V input logic compatible • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • 8-Lead SOIC is also available LEAD-FREE (PbF)
