IR2110E6, IR2110L, IR2110PB Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
IR2110E6, IR2110L, IR2110PB Datasheet download
Part Number: IR2110E6
MFG: IR
Package Cooled: N/A
D/C: 2010+
IR2110E6, IR2110L, IR2110PB
- Table of contents:
Info of IR2110E6
Info of IR2110L
Info of IR2110PB
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About IR2110E6
PDF/DataSheet Download
Datasheet: IR2110E6
File Size: 377981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IR2110L
PDF/DataSheet Download
Datasheet: IR2110L
File Size: 146568 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IR2110PBF
PDF/DataSheet Download
Datasheet: IR2110PBF
File Size: 336436 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IR2110E6 General Description
The IR2110E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2110E6 Maximum Ratings
| Symbol | Parameter | Min. | Max. | Units |
| VB | High Side Floating Supply Absolute Voltage | -0.5 | VS + 20 | V |
| VS | High Side Floating Supply Offset Voltage | - | 400 | |
| VHO | High Side Output Voltage | VS -0.5 | VB + 0.5 | |
| VCC | Low Side Fixed Supply Voltage |
-0.5 | 20 | |
| VLO | Low Side Output Voltage | -0.5 | VCC + 0.5 | |
| VDD | Logic Supply Voltage | -0.5 | VSS + 20 | |
| VSS | Logic Supply Offset Voltage | VCC - 20 | VCC + 0.5 | |
| VIN | Logic Input Voltage (HIN, LIN & SD) | VSS - 0.5 | VDD + 0.5 | |
| dVS/dt |
Allowable Offset Supply Voltage Transient (Fig. 16) | - | 50 | V/ns |
| PD | Package Power Dissipation @ TA = 25 (Fig. 19) | - | 1.6 | W |
| RthJA | Thermal Resistance, Junction to Ambient | - | 125 | /W |
| Tj | Junction Temperature |
-55 | 125 | |
| TS | Storage Temperature | -55 | 150 | |
| TL | Package Mounting Surface Temperature | 300 (for 5 seconds) | ||
| Weight | 0.45 (typical) | g | ||
IR2110E6 Features
·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down
·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels
·Outputs in phase with inputs
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down
·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels
·Outputs in phase with inputs
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