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The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2106 Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High Side Floating Supply Voltage
-0.3
625
V
VS
High Side Floating Supply Offset Voltage
VB - 25
VB + 0.3
VHO
High Side Floating Output Voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low Side Output Voltage
-0.3
VCC + 0.3
VIN
Logic input voltage
VSS - 0.3
VSS + 10
VSS
Logic ground (IR21064 only)
VCC - 25
VCC + 0.3
dVs/dt
Allowable Offset Supply Voltage Transient
-
50
V/ns
PD
Package Power Dissipation @ TA +25°C
(8 Lead DIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
(14-lead PDIP)
-
1.6
(14-lead SOIC)
-
1.0
RJA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
-
125
/W
(8 Lead SOIC)
-
200
(14-lead PDIP)
-
75
(14-lead SOIC)
-
120
TJ
Junction Temperature
-
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
-
300
IR2106 Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V (IR2106(4)) • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5V offset. • Lower di/dt gate driver for better noise immunity • Outputs in phase with inputs (IR2106)