IPF13N03LA, IPF13N03LA G, IPFH6N03LA G Selling Leads, Datasheet
MFG:INFINEON Package Cooled:SOT-252 D/C:2006
IPF13N03LA, IPF13N03LA G, IPFH6N03LA G Datasheet download
Part Number: IPF13N03LA
MFG: INFINEON
Package Cooled: SOT-252
D/C: 2006
MFG:INFINEON Package Cooled:SOT-252 D/C:2006
IPF13N03LA, IPF13N03LA G, IPFH6N03LA G Datasheet download
MFG: INFINEON
Package Cooled: SOT-252
D/C: 2006
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IPF13N03LA
File Size: 423892 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPF04N03LA
File Size: 444441 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPF04N03LA
File Size: 444441 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 30 | A |
TC=100 | 30 | |||
Pulsed drain current | ID,pulse | TC=25 3) | 210 | |
Avalanche energy, single pulse | EAS | ID=24 A, RGS=25 Ω | 60 | mJ |
Reverse diode dv /dt | dv /dt | ID=30 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 46 | W |
Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 30 | A |
TC=100 | 30 | |||
Pulsed drain current | ID,pulse | TC=25 3) | 210 | |
Avalanche energy, single pulse | EAS | ID=24 A, RGS=25 Ω | 60 | mJ |
Reverse diode dv /dt | dv /dt | ID=30 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 46 | W |
Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |