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IPF05N03LAG

Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel, logic level• Excellent gate charge x R DS(on) product (FOM)• Superior thermal resistance• 175 °C operating temperature• Pb-free lead pl...

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SeekIC No. : 004375787 Detail

IPF05N03LAG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel, logic level• Excellent gate charge x R DS(on) product...

IPF05N03LAG Data Sheet

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Part Number:
IPF05N03LAG
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 °C2) 50 A
T C=100 °C 50
Pulsed drain current I D,pulse T C=25 °C3) 350
Avalanche energy, single pulse E AS I D=45 A, R GS=25 300 mJ
Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 °C		 6 kV/s
Gate source voltage4) V GS   ±20 V
Power dissipation P tot T C=25 °C 94 W
Operating and storage temperature Tj, Tstg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
2) Current is limited by bondwire; with an RthJC=1.6 K/W the chip is able to carry 106 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D<0.25 for V GS<-5 V
1) J-STD20 and JESD22


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