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IPF06N03LA G, IPF090N03L G, IPF09N03LA

Table of contents:
Info of IPF06N03LA G
Info of IPF090N03L G
Info of IPF09N03LA

IPF06N03LA G, IPF090N03L G, IPF09N03LA Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO252-3 D/C:2008+

IPF06N03LA G, IPF090N03L G, IPF09N03LA Picture

IPF06N03LA G, IPF090N03L G, IPF09N03LA Datasheet download

Five Points

Part Number: IPF06N03LA G

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO252-3

D/C: 2008+

Description: MOSFET N-CH 25V 50A DPAK

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IPF09N03LA Parameters

Technical/Catalog Information	IPF09N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	8.6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1642pF @ 15V
Power - Max	63W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPF09N03LA IPF09N03LA

IPF09N03LA Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 ¹)	50	A
Continuous drain current	I_D	T_C=100	46
Pulsed drain current	I_D,pulse	T_C=25 ²)	350
Avalanche energy, single pulse	E_AS	I_D=45 A, R_GS=25 Ω	75	mJ
Reverse diode dv /dt	dv /dt	I_D=50 A, V_DS=20 V, di /dt =200 A/µs, T _j,max=175	6	kV/µs
Gate source voltage³)	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	63	W
Operating and storage temperature	T_j, T_stg		-55 ...175
IEC climatic category; DIN IEC 68-1			55/175/56

IPF09N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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