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IPF09N03LBG, IPF10N03LA, IPF10N03LAG

Table of contents:
Info of IPF09N03LBG
Info of IPF10N03LA
Info of IPF10N03LAG

IPF09N03LBG, IPF10N03LA, IPF10N03LAG Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:.

IPF09N03LBG, IPF10N03LA, IPF10N03LAG Picture

IPF09N03LBG, IPF10N03LA, IPF10N03LAG Datasheet download

Five Points

Part Number: IPF09N03LBG

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-251

D/C: .

Description: MOSFET N-CH 25V 30A DPAK

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IPF10N03LA Parameters

Technical/Catalog Information	IPF10N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	10.4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1358pF @ 15V
Power - Max	52W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPF10N03LA IPF10N03LA

IPF10N03LA Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature

IPF10N03LAG Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I _D	T _C=25 2) T _C=100	30 30	A
Pulsed drain current	I _D,pulse	T _C=25 3)	210	A
Avalanche energy, single pulse	E _AS	I _D=30 A, R _GS=25	80	mJ
Reverse diode dv /dt	dv /dt	D=30 A, V _DS=20 V, di /dt =200 A/s, T _j,max=175	6	kV/s
Gate source voltage4)	V _GS		±20	V
Power dissipation	P _tot	T _C=25	52	W
Operating and storage temperature	T _j, T _stg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

IPF10N03LAG Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant

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