MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:2006
IPF04N03LA, IPF04N03LA G, IPF05N03LA Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: SOT-252
D/C: 2006
Description: MOSFET N-CH 25V 50A DPAK
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PDF/DataSheet Download
Datasheet: IPF04N03LA
File Size: 444441 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPF04N03LA
File Size: 444441 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPF05N03LA
File Size: 444944 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPF04N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 5199pF @ 15V |
| Power - Max | 115W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 41nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPF04N03LA IPF04N03LA |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 2) | 50 | A |
| TC=100 | 50 | |||
| Pulsed drain current | ID,pulse | TC=25 3) | 350 | |
| Avalanche energy, single pulse | EAS | ID=40 A, RGS=25 Ω | 890 | mJ |
| Reverse diode dv /dt | dv /dt | ID=50 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 115 | W |
| Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 2) | 50 | A |
| TC=100 | 50 | |||
| Pulsed drain current | ID,pulse | TC=25 3) | 350 | |
| Avalanche energy, single pulse | EAS | ID=45 A, RGS=25 Ω | 300 | mJ |
| Reverse diode dv /dt | dv /dt | ID=50 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 94 | W |
| Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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