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INA02170, INA-02170, INA-02184

Table of contents:
Info of INA02170
Info of INA-02170
Info of INA-02184

INA02170, INA-02170, INA-02184 Selling Leads, Datasheet

MFG:HP/AVAGO/Agilent Package Cooled:NEW AND ORIGINAL D/C:00+

INA02170, INA-02170, INA-02184 Datasheet download

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Part Number: INA02170

MFG: HP/AVAGO/Agilent

Package Cooled: NEW AND ORIGINAL

D/C: 00+

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INA-02170 General Description

The INA-02170 is a low noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f_MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

INA-02170 Maximum Ratings

Parameter	Absolute Maximum^[1]
Device Current	50 mA
Power Dissipation^[2,3]	400 mW
RF Input Power	+13 dBm
Junction Temperature	200°C
Storage Temperature	65 to 200°C

Thermal Resistance^[2,4]:
_jc = 140°C/W

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE= 25°C.
3. Derate at 7.1 mW/°C for T_C > 144°C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.

INA-02170 Features

• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 1.0 GHz
• Unconditionally Stable (k>1)
• Hermetic Gold-Ceramic Surface Mount Package

INA-02184 General Description

The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f_MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

INA-02184 Maximum Ratings

Parameter	Absolute Maximum^[1]
Device Current	50 mA
Power Dissipation^[2,3,4]	400 mW
RF Input Power	+13 dBm
Junction Temperature	+150°C
Storage Temperature	65 to150°C

Thermal Resistance^[2]:
_jc= 90°C/W - INA-02184
_jc = 100°C/W - INA-02186

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 11.1 mW/°C for T_C > 144°C for INA-02184.
4. Derate at 10 mW/°C for T_C > 110°C for INA-02186.

INA-02184 Features

• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 0.8 GHz
• Unconditionally Stable (k>1)
• Low Cost Plastic Package

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