Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1.0 GHz• Unconditionally Stable (k>1)Specifications Parameter Absolute Maximum[1] De...
INA-02100: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1....
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• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 1.0 GHz
• Unconditionally Stable (k>1)
Parameter | Absolute Maximum[1] |
Device Current | 50 mA |
Power Dissipation[2,3] | 400 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
Thermal Resistance[2]: jc = 60°C/W |
The INA-02100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.
The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
The recommended assembly procedure of the INA-02100 is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1]