INA-02100

Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1.0 GHz• Unconditionally Stable (k>1)Specifications Parameter Absolute Maximum[1] De...

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SeekIC No. : 004375334 Detail

INA-02100: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1....

floor Price/Ceiling Price

Part Number:
INA-02100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
   31.5 dB Typical at 0.5 GHz
   25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 1.0 GHz
• Unconditionally Stable (k>1)




Specifications

Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 400 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature 65 to 200°C
Thermal Resistance[2]:
jc = 60°C/W
Notes:
  1. Permanent damage may occur if any of these limits are exceeded.
  2. TMounting Surface (TMS) = 25°C
  3. Derate at 16.7 mW/°C for TMS > 176°C.
3. Derate at 16.7 mW/°C for TMS > 176°C.



Description

The INA-02100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

The recommended assembly procedure of the INA-02100 is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1]




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