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INA-01170

Features: • Cascadable 50 Gain Block• Low Noise Figure: 1.7 dB Typical at 100 MHz• High Gain: 32.5 dB Typical at 100 MHz• 3 dB Bandwidth: DC to 500ÊMHz• Unconditionally Stable (k>1)• Hermetic Gold-Ceramic Surface Mount PackageSpecifications Parame...

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INA-01170: Features: • Cascadable 50 Gain Block• Low Noise Figure: 1.7 dB Typical at 100 MHz• High Gain: 32.5 dB Typical at 100 MHz• 3 dB Bandwidth: DC to 500ÊMHz• Uncondit...

INA-01170 Data Sheet

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Part Number:
INA-01170
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Cascadable 50 Gain Block
• Low Noise Figure: 1.7 dB Typical at 100 MHz
• High Gain: 32.5 dB Typical at 100 MHz
• 3 dB Bandwidth: DC to 500ÊMHz
• Unconditionally Stable (k>1)
• Hermetic Gold-Ceramic Surface Mount Package


Specifications

Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 400 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature 65 to 200°C
Thermal Resistance[2,4]:
jc = 140°C/W
Notes:
  1. Permanent damage may occur if any of these limits are exceeded.
  2. TCASE = 25°C.
  3. Derate at 7.1 mW/°C for TC > 144°C.
  4. See MEASUREMENTS section "Thermal Resistance" for more information.


Description

The INA-01170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs of the INA-01170 is fabricated using HP's 10 GHz fT, 25ÊGHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.




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