Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1.0 GHz• Unconditionally Stable (k>1)• Hermetic Gold-Ceramic Surface Mount PackageSpec...
INA-02170: Features: • Cascadable 50 Gain Block• Low Noise Figure: 2.0 dB Typical at 0.5 GHz• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz• 3 dB Bandwidth: DC to 1...
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Parameter | Absolute Maximum[1] |
Device Current | 50 mA |
Power Dissipation[2,3] | 400 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
Thermal Resistance[2,4]: jc = 140°C/W |
The INA-02170 is a low noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.
The INA series of MMICs of the INA-02170 is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.