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INA01170, INA-01170, INA-02100

Table of contents:
Info of INA01170
Info of INA-01170
Info of INA-02100

INA01170, INA-01170, INA-02100 Selling Leads, Datasheet

MFG:HP/AVAGO/Agilent Package Cooled:NEW AND ORIGINAL D/C:09+\10+

INA01170, INA-01170, INA-02100 Datasheet download

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Part Number: INA01170

MFG: HP/AVAGO/Agilent

Package Cooled: NEW AND ORIGINAL

D/C: 09+\10+

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INA-01170 General Description

The INA-01170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25ÊGHz f _MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

INA-01170 Maximum Ratings

Parameter	Absolute Maximum^[1]
Device Current	50 mA
Power Dissipation^[2,3]	400 mW
RF Input Power	+13 dBm
Junction Temperature	200°C
Storage Temperature	65 to 200°C

Thermal Resistance^[2,4]:
_jc = 140°C/W

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 7.1 mW/°C for T_C > 144°C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.

INA-01170 Features

• Cascadable 50 Gain Block
• Low Noise Figure: 1.7 dB Typical at 100 MHz
• High Gain: 32.5 dB Typical at 100 MHz
• 3 dB Bandwidth: DC to 500ÊMHz
• Unconditionally Stable (k>1)
• Hermetic Gold-Ceramic Surface Mount Package

INA-02100 General Description

The INA-02100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.

The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f_MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.^[1]

INA-02100 Maximum Ratings

Parameter	Absolute Maximum^[1]
Device Current	50 mA
Power Dissipation^[2,3]	400 mW
RF Input Power	+13 dBm
Junction Temperature	200°C
Storage Temperature	65 to 200°C

Thermal Resistance^[2]:
_jc = 60°C/W

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_MountingSurface (T_MS) = 25°C
3. Derate at 16.7 mW/°C for TMS > 176°C.3. Derate at 16.7 mW/°C for T_MS > 176°C.

INA-02100 Features

• Cascadable 50 Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 1.0 GHz
• Unconditionally Stable (k>1)

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