HPMX2003, HPMX-2003, HPMX-2004 Selling Leads, Datasheet
MFG:Hewlett-Packard Package Cooled:DIP/SOP D/C:9426
HPMX2003, HPMX-2003, HPMX-2004 Datasheet download
Part Number: HPMX2003
MFG: Hewlett-Packard
Package Cooled: DIP/SOP
D/C: 9426
MFG:Hewlett-Packard Package Cooled:DIP/SOP D/C:9426
HPMX2003, HPMX-2003, HPMX-2004 Datasheet download
MFG: Hewlett-Packard
Package Cooled: DIP/SOP
D/C: 9426
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: HPMD-7904
File Size: 113569 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HPMX-2003
File Size: 317227 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HPMD-7904
File Size: 113569 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
Hewlett Packard's HPMX-2003 is a Silicon RFIC direct conversion vector modulator designed for use at output frequencies between 800 MHz and 1 GHz. Housed in a SO-16 surface mount plastic package, the IC contains two matched Gilbert cell mixers, an RC phase shifter, a summer, and an output amplifier complete with 50 W impedance match and DC block.
This device is suitable for use in direct and offset-loop modulated portable and mobile telephone handsets for cellular systems such as GSM, North American Digital Cellular and Japan Digital Cellular. It can also be used in digital transmitters operating in the 900 MHz ISM (Industrial-Scientific- Medical) band, including use in Local Area Networks (LANs).
The HPMX-2003 is fabricated with Hewlett-Packard's 25 GHz ISOSAT-II process, which combines stepper lithography, ion-implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability.
Symbol |
Parameter |
Units |
Absolute Maximum[1] |
Pdiss |
Power Dissipation [2,3] |
mW |
500 |
LOin |
LO Input Power |
dBm |
15 |
VCC |
Supply Voltage |
V |
10 |
VImod,VQmod |
Swing of VImod about VIref [4]or VQmod about VQref |
Vp-p |
5[4] |
VIref, VQref |
Reference Input Levels |
V |
5 |
TSTG |
Storage Temperature |
-65 to 150 | |
Tj |
Junction Temperature |
150 |
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TC = 25°C (TC is defined to be the temperature at the end of pin 3 where it contacts the circuit board).
3. Derate at 8 mW/°C for TC > 88°C.
4. Do not exceed VCC by more than 0.8 V.