Features: • 25 - 250 MHz Output Frequency• -5 dBm Peak Pout• Unbalanced 50 W Ouptut Match• Internal 90° Phase Shifter• 5 V, 15 mA Bias • SO-16 Surface Mount PackageApplication• Dual Conversion Cellular Telephone and PCS Handsets• Dual Conversion ISM ...
HPMX-2005: Features: • 25 - 250 MHz Output Frequency• -5 dBm Peak Pout• Unbalanced 50 W Ouptut Match• Internal 90° Phase Shifter• 5 V, 15 mA Bias • SO-16 Surface Mount Packa...
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Symbol |
Parameter |
Units |
Absolute Maximum[1] |
Pdiss |
Power Dissipation [2,3] |
mW |
500 |
LOin |
LO Input Power |
dBm |
15 |
VCC |
Supply Voltage |
V |
10[4] |
VImod,VQmod |
Swing of VImod about VIref or VQmod about VQref |
Vp-p |
5[4] |
VIref, VQref |
Reference Input Levels |
V |
5 |
TSTG |
Storage Temperature |
-65 to 150 | |
Tj |
Junction Temperature |
150 |
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TC = 25°C (TC is defined to be the temperature at the ends of pin 3 where it contacts the circuit board).
3. Derate at 8 mW/°C for TC > 87°C.
4. This voltage must not exceed VCC by more than 0.8 V.
Hewlett Packard's HPMX-2005 is a silicon RFIC vector modulator housed in a SO-16 surface mount plastic package. This IC can be used for direct modulation at output frequencies from 25 to 250ÊMHz, or, in combination with an up-converting mixer, for dual or multiple conversion modulation to higher frequencies. The IC contains two matched Gilbert cell mixers, an RC phase shifter, a summer, and an output amplifier.
This RFIC HPMX-2005 is well suited to portable and mobile cellular telephone applications such as North American Digital Cellular, GSM, and Japan Digital Cellular, and to Personal Communications Systems such as DCS-1800 or handyphones. It is also useful for applications in 900 MHz, 2.4 GHz and 5.7 GHz ISM (Industrial-Scientific- Medical) bands requiring digital modulation, such as Local Area Networks (LANs).
The HPMX-2005 is fabricated with Hewlett-Packard's 25 GHz ISOSAT-II process, which combines stepper lithography, selfalignment, ion-implantation techniques, and gold metallization to produce state of the art RFICs.