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HN2S02JE, HN2S03FU, HN3B01F

Table of contents:
Info of HN2S02JE
Info of HN2S03FU
Info of HN3B01F

HN2S02JE, HN2S03FU, HN3B01F Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOT-453 D/C:08+

HN2S02JE, HN2S03FU, HN3B01F Datasheet download

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Part Number: HN2S02JE

MFG: TOSHIBA

Package Cooled: SOT-453

D/C: 08+

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HN2S02JE Maximum Ratings

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse Voltage	V_RM	45	V
Reverse voltage	V_R	40	V
Maximum (peak) forward current	I_FM	300*	mA
Average forward current	I_O	100*	mA
Surge current (10ms)	I_FSM	1*	A
Power dissipation	P	100**	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	-55~125
Operating temperature range	T_opr	-40~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : Unit rating (Total rating = unit rating * 1.5)
** :Total rating

HN2S02JE Typical Application

`HN2S02JE is composed of two independent diodes.
`Low forward voltage: V_{F (3)} = 0.54V (typ.)
`Low reverse current: I_R = 5A (max.)

HN2S02JE Connection Diagram

HN2S03FU Maximum Ratings

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse Voltage	V_RM	25	V
Reverse voltage	V_R	25	V
Maximum (peak) forward current	I_FM	100*	mA
Average forward current	I_O	50*	mA
Surge current (10ms)	I_FSM	1	A
Power dissipation	P	200**	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	-55~125
Operating temperature range	T_opr	-40~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one.
** :Total rating

HN2S03FU Features

`HN2S03FU is composed of 3 independent diodes.
`Low forward voltage : VF (3) = 0.50V (typ.)
`Low reverse current : IR= 0.5A (max)
`Small total capacitance : CT = 3.9pF (typ.)

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