HN3C14FT

The HN3C14FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.

HN3C14FT's some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 20V. (2)Its collector to emitter voltage would be 10V. (3)Its emitter to base voltage would be 3V. (4)Its collector current would be 60mA. (5)Its base current would be 30mA. (6)Its  collector power dissipation would be 200mW. (7)Its junction temperature range would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of HN3C14FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=10V, Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 80 and max 240 with conditions of Vce=5V and Ic=5mA. (4)Its transition frequency would be min 3GHz and typ 5GHz with conditions of Vce=5V and Ic=5mA. (5)Its insertion gain would be min 7dB and typ 10dB with conditions of Vce=5V, Ic=5mA and f=1000MHz and it would be min 7.5dB and typ 10.5dB with conditions of Vce=5V, Ic=5mA and f=2000MHz. (6)Its reverse transfer capacitance would be typ 0.6pF and max 1pF with conditions of Vce=5V, Ie=0 and f=1MHz.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products HN3C14FT. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!