HN3C10FT

The HN3C10FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.

HN3C10FT's some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 20V. (2)Its collector to emitter voltage would be 12V. (3)Its emitter to base voltage would be 3V. (4)Its collector current would be 80mA. (5)Its base current would be 40mA. (6)Its  collector power dissipation would be 200mW. (7)Its junction temperature range would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of HN3C10FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=10V, Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 80 and max 240 with conditions of Vce=10V and Ic=20mA. (4)Its transition frequency would be min 5GHz and typ 7GHz with conditions of Vce=10V and Ic=20mA. (5)Its insertion gain would be min 8.5dB and typ 12dB with conditions of Vce=10V, Ic=20mA and f=1000MHz and it would be min 8dB and typ 11.5dB with conditions of Vce=10V, Ic=20mA and f=2000MHz. (6)Its noise configure would be typ 1.1dB and max 2dB with condition of Vce=10V, Ic=5mA and f=1000MHz.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products HN3C10FT. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!