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HN27C256AFP

Features: ` High speed Access time: 120/150 ns (max)` Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 W (typ)` High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm available` Device identifier mode Manufacturer...

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SeekIC No. : 004364959 Detail

HN27C256AFP: Features: ` High speed Access time: 120/150 ns (max)` Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 W (typ)` High reliability and fast programming Programming voltage: +...

HN27C256AFP Data Sheet

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Part Number:
HN27C256AFP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  High speed
     Access time: 120/150 ns (max)
`  Low power dissipation
     Active mode: 25 mW (typ) (f = 1 MHz)
     Standby mode: 5 W (typ)
`  High reliability and fast programming
     Programming voltage: +12.5 V DC
     Fast High-Reliability Programming Algorithm available
`  Device identifier mode
     Manufacturer code and device code


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
All input and output voltages*1
Vin, Vout
0.6*2 to +7.0
V
A9 input voltage*1
VID
0.6*2 to + 13.5
V
VPP voltage*1
VPP
0.6 to +13.5
V
VCC voltage*1
VCC
0.6 to + 7.0
V
Operating temperature range
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Storage temperature range under bias
Tbias
10 to +80
°C
Notes: 1. Relative to VSS
2. Vin, Vout and VID min = 1.0 V for pulse width 50 ns


Description

The HN27C256AFP is a 32768-word by 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C256AP/AFP are in the "1" State (Output High). Data is introduced by selectively programming "0" into the desired bit locations. This device is packaged in a 28-pin plastic package (DIP, SOP). Therefore, this device cannot be re-written.




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