H5N5005PL, H5N5006, H5N5006FM Selling Leads, Datasheet
MFG:HITACHI Package Cooled:04+ D/C:300
H5N5005PL, H5N5006, H5N5006FM Datasheet download
Part Number: H5N5005PL
MFG: HITACHI
Package Cooled: 04+
D/C: 300
H5N5005PL, H5N5006, H5N5006FM
- Table of contents:
Info of H5N5005PL
Info of H5N5006
Info of H5N5006FM
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About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
H5N5005PL Maximum Ratings
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
500 |
V |
| Drain to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
60 |
A |
| Drain peak current |
ID(pulse) Note1 |
240 |
A |
| Body-drain diode reverse drain current |
IDR |
60 |
A |
| Body-Drain diode reverse Drain peak current |
IDR (pulse) Note1 |
240 |
A |
| Avalanche current |
IAP Note 3 |
30 |
A |
| Channel dissipation |
Pch Note 2 |
270 |
W |
| Channel to case thermal impedance |
ch-c |
0.463 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. STch = 25°C, Tch 150
H5N5005PL Features
• Low on-resistance: RDS(on) = 0.070 typ.
• Low leakage current: IDSS = 10 A max (at VDS = 500 V)
• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 )
• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 220 ns typ
• Low leakage current: IDSS = 10 A max (at VDS = 500 V)
• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 )
• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 220 ns typ
H5N5006FM Maximum Ratings
|
Item |
Symbol |
Value |
Unit |
| Drain to source voltage |
VDSS |
500 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
3 |
A |
| Drain peak current |
ID (pulse) Note 1 |
12 |
A |
| Body-drain diode reverse drain current |
IDR |
3 |
A |
| Body-drain diode reverse drain peak current |
IDR (pulse) Note 1 |
12 |
A |
| Avalanche current |
IAP Note 3 |
3 |
A |
| Channel dissipation |
Pch Note 2 |
25 |
W |
| Channel to case thermal Impedance |
ch-c |
5.0 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |
2. Value at Tc = 25
3. Tch 150
H5N5006FM Features
`Low on-resistance: R DS (on) = 2.5 typ.
`Low leakage current: IDSS = 1 A max (at VDS = 500 V)
`High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
`Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
`Avalanche ratings
`Low leakage current: IDSS = 1 A max (at VDS = 500 V)
`High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
`Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
`Avalanche ratings
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