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H5N2003P

Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 200 V Gate to Source voltage VGSS ±30 V Drain current ID 60 A Drain peak current ID (pulse) Note1 240...

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SeekIC No. : 004357659 Detail

H5N2003P: Features: ·Low on-resistance·Low leakage current·High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 200 V Gate to Source voltage ...

H5N2003P Data Sheet

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Part Number:
H5N2003P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

·Low on-resistance
·Low leakage current
·High speed switching


Specifications

Item
Symbol
Ratings
Unit
Drain to Source voltage
VDSS
200
V
Gate to Source voltage
VGSS
±30
V
Drain current
ID
60
A
Drain peak current
ID (pulse) Note1
240
A
Body-Drain diode reverse Drain current
IDR
60
A
Body-Drain diode reverse Drain peak current
IDR (pulse) Note1
240
A
Avalanche current
IAP Note3
40
A
Channel dissipation
Pch Note2
150
W
Channel to case thermal impedance
ch-c
0.833
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. Tch 150


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