Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V GGate to source voltage VGSS ±30 V Drain current ID 20 A Drain peak current ...
H5N2001LS: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V GG...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
200 |
V |
GGate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
ID(pulse)Note1 |
80 |
A |
Body to drain diode reverse drain current |
IDR |
20 |
A |
Body to drain diode reverse drain peak current |
IDR (pulse)Note1 |
80 |
A |
Avalanche current |
IAPNote 3 |
20 |
A |
Channel dissipation |
Pch Note 2 |
75 |
W |
Channel to case Thermal Impedance |
ch-c |
1.67 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |