H5N2001LD

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V GGate to source voltage VGSS ±30 V Drain current ID 20 A Drain peak current ...

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SeekIC No. : 004357656 Detail

H5N2001LD: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V GG...

floor Price/Ceiling Price

Part Number:
H5N2001LD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching



Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
200
V
GGate to source voltage
VGSS
±30
V
Drain current
ID
20
A
Drain peak current
ID(pulse)Note1
80
A
Body to drain diode reverse drain current
IDR
20
A
Body to drain diode reverse drain peak current
IDR (pulse)Note1
80
A
Avalanche current
IAPNote 3
20
A
Channel dissipation
Pch Note 2
75
W
Channel to case Thermal Impedance
ch-c
1.67
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25
           3. Tch 150


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