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H5N1506P

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 150 V Gate to Source Voltage VGSS ±30 V Drain Current ID 98 A Drain Current (Pulse) ID(pulse)Note 1 ...

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SeekIC No. : 004357655 Detail

H5N1506P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 150 V Gate to So...

H5N1506P Data Sheet

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Part Number:
H5N1506P
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Parameter Symbol Ratings UNIT
Drain to Source Voltage VDSS 150 V
Gate to Source Voltage VGSS ±30 V
Drain Current ID 98 A
Drain Current (Pulse) ID(pulse)
Note 1		 294 A
Body-drain diode reverse drain current IDR 98 A
Body-Drain diode reverse Drain peak current IDR(pulse)
Note 1		 294 A
Avalanche current IAPNote3 48 A
Avalanche energy EarNote3 172 mJ
Channel dissipation PchNote 2 150 W
Channel to case thermal impedance ch-c 0.833 /W
Channel Temperature Tch 150
Storage Temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. STch = 25, Tch 150


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