H5N2005DL, H5N2005DS, H5N2007FN Selling Leads, Datasheet
MFG:HITACHI Package Cooled:04+ D/C:2500
H5N2005DL, H5N2005DS, H5N2007FN Datasheet download
Part Number: H5N2005DL
MFG: HITACHI
Package Cooled: 04+
D/C: 2500
MFG:HITACHI Package Cooled:04+ D/C:2500
H5N2005DL, H5N2005DS, H5N2007FN Datasheet download
MFG: HITACHI
Package Cooled: 04+
D/C: 2500
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PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H5N2005DS
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
Parameter | Symbol | Value | Unit |
Drain to source voltage | VDSS | 200 | V |
Gate-to-Source Voltage | VGSS | ±30 | V |
Drain current | ID | 6 | A |
Drain peak current | IDpulse) Note 1 |
24 | A |
Body-drain diode reverse drain current | IDR | 6 | A |
Body-drain diode reverse drain peak current | IDRpulse) Note 1 |
24 | A |
Power Dissipation | Pch | 25 | W |
Channel to case thermal Impedance | ch-c | 5 | /W |
Power Dissipation | Tch | 150 | |
Operating and Storage Temperature Range | Tstg | -55 to +150 |
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
200 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
25 |
A |
Drain peak current |
I (pulse) Note1 |
100 |
A |
Body-drain diode reverse drain current |
IDR |
25 |
A |
Body-Drain diode reverse Drain peak current |
IDR (pulse)Note1 |
100 |
A |
Avalanche current |
IAPNote3 |
9 |
A |
Avalanche energy |
EARNote3 |
5.4 |
mJ |
Channel dissipation |
PchNote2 |
30 |
W |
Channel to case Thermal impedance |
ch-c |
4.17 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |