H5N2901FN, H5N2901FN-E-A9, H5N3003 Selling Leads, Datasheet
MFG:HITACHI Package Cooled:04+ D/C:2000
H5N2901FN, H5N2901FN-E-A9, H5N3003 Datasheet download
Part Number: H5N2901FN
MFG: HITACHI
Package Cooled: 04+
D/C: 2000
MFG:HITACHI Package Cooled:04+ D/C:2000
H5N2901FN, H5N2901FN-E-A9, H5N3003 Datasheet download
MFG: HITACHI
Package Cooled: 04+
D/C: 2000
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PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H5N3003
File Size: 136743 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
290 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
18 |
A |
Drain peak current |
ID (pulse) Note 1 |
72 |
A |
Body to drain diode reverse drain current |
IDR |
18 |
A |
Body-Drain diode reverse Drain peak current |
IDR (pulse) Note 1 |
72 |
A |
Avalanche current |
IAPNote 3 |
6 |
A |
Avalanche energy |
EARNote 3 |
2.1 |
mJ |
Channel dissipation |
Pch Note 2 |
30 |
W |
Channel to case thermal impedance |
ch-c |
4.17 |
°C/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |