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GT50J301, GT50J322, GT50J325

Table of contents:
Info of GT50J301
Info of GT50J322
Info of GT50J325

GT50J301, GT50J322, GT50J325 Selling Leads, Datasheet

MFG:TOS Package Cooled:TO-3PL D/C:TO-3PL

GT50J301, GT50J322, GT50J325 Datasheet download

Five Points

Part Number: GT50J301

MFG: TOS

Package Cooled: TO-3PL

D/C: TO-3PL

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GT50J322 Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	600	V
Gate−Emitter Voltage		V_GES	±20	V
Collector Current	DC	I_C	50	A
Collector Current	1ms	I_CP	100	A
Emitter-Collector Foward Current	DC	I_F	30	A
Emitter-Collector Foward Current	1ms	I_FP	60	A
Collector Power Dissipation (T_c = 25)		P_C	130	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT50J322 Typical Application

`FRD included between emitter and collector
`Enhancement mode type
`High speed : t_f = 0.25s (Typ.) (I_C = 50A)
`Low saturation voltage : V_{CE (sat)} = 2.1V (Typ.) (I_C = 50A)

GT50J325 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Collector-emitter voltage		V_CES	600	V
Gate-emitter voltage		V_GES	±20	V
Collector current	DC	I_C	50	A
Collector current	1 ms	I_CP	100	A
Emitter-collector forward current	DC	I_F	50	A
Emitter-collector forward current	1 ms	I_FM	100	A
Collector power dissipation (Tc = 25)		P_C	240	W
Junction temperature		T_j	150
Storage temperature range		T_stg	−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT50J325 Features

• Fourth generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: t_f= 0.05 s (typ.)
• Low switching loss : E_on = 1.30 mJ (typ.) : E_off= 1.34 mJ (typ.)
• Low saturation Voltage: V_{CE (sat)} = 2.0 V (typ.)
• FRD included between emitter and collector

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