GT50G321

The GT50G321 is designed as one kind of silicon N-channel IGBT that can be used in current resonance inverter switching applications. Features of the GT50G321 are:(1)FRD included between emitter and collector;(2)enhancement-mode;(3)high speed: tf=0.30 us (typ.) (Ic=60 A);(4)low saturation voltage: VCE(sat)=1.8 V (typ.) (Ic=60 A).

The absolute maximum ratings of the GT50G321 can be summarized as:(1)collector-emitter voltage: 400 V;(2)gate-emitter voltage: +/-25 V;(3)collector current DC: 50 A;(4)collector current 1 ms: 100 A;(5)emitter-collector forward current DC: 15 A;(6)emitter-collector forward current 1 ms: 30 A;(7)collector power dissipation (Tc=25): 130 W;(8)junction temperature: 150 ;(9)storage temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about the GT50G321, please download the datasheet in www.seekic.com or www.chinaicmart.com .