IGBT Transistors IGBT 600V 50A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3P | Packaging : | Bulk |
Technical/Catalog Information | GT50J102(Q) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 50A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | * |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | GT50J102 Q GT50J102Q |