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GT50J322

Application`FRD included between emitter and collector`Enhancement mode type`High speed : tf = 0.25s (Typ.) (IC = 50A)`Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 600 V Gate−...

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GT50J322: Application`FRD included between emitter and collector`Enhancement mode type`High speed : tf = 0.25s (Typ.) (IC = 50A)`Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications ...

GT50J322 Data Sheet

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Part Number:
GT50J322
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`FRD included between emitter and collector
`Enhancement mode type
`High speed : tf = 0.25s (Typ.) (IC = 50A)
`Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)


Specifications

CHARACTERISTIC SYMBOL RATING UNIT
Collector−Emitter Voltage VCES 600 V
Gate−Emitter Voltage VGES ±20 V
Collector Current DC IC 50 A
1ms ICP 100
Emitter-Collector Foward Current DC IF 30 A
1ms IFP 60
Collector Power Dissipation
(Tc = 25)		 PC 130 W
Junction Temperature Tj 150
Storage Temperature Range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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