GT50J122 Selling Leads, Price trend, GT50J122 DataSheet download, circuit diagram from SeekIC.com

Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• Fourth-generation IGBT• TO-3P(N) (Toshiba package name)Specifications Characteristics Symbol Rating Unit Coll...

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SeekIC No. : 004357045 Detail

GT50J122: Features: • Enhancement mode type• High speed : tf = 0.16 s (typ.) (IC = 60A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)• Fourth-generation IGBT• TO-3...

GT50J122 Data Sheet

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Part Number:: GT50J122
Supply Ability:: 5000

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Upload time: 2024/11/27

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Product Details

Description

Features:

• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (IC = 60A)
• Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 60A)
• Fourth-generation IGBT
• TO-3P(N) (Toshiba package name)

Specifications

Characteristics	Symbol	Rating	Unit
Collector-emitter voltage	V_CES	600	V
Gate-emitter voltage	V_GES	±25	V
Continuous collector current @ Tc = 100 @ Tc = 25	I_C	31 50	A
Pulsed collector current	I_CP	120	A
Collector power dissipation @ Tc = 100 @ Tc = 25	P_C	62 156	W
Junction temperature	Tj	150
Storage temperature range	Tstg	−55 to 150

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GT50J122

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