GT50J327 Selling Leads, Price trend, GT50J327 DataSheet download, circuit diagram from SeekIC.com

Features: • Enhancement mode type• High speed : tf = 0.19 s (typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)• FRD included between emitter and collector• Fourth generation IGBT• TO-3P(N) (Toshiba package name)Specifications C...

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SeekIC No. : 004357048 Detail

GT50J327: Features: • Enhancement mode type• High speed : tf = 0.19 s (typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)• FRD included between emitter and c...

GT50J327 Data Sheet

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Part Number:: GT50J327
Supply Ability:: 5000

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Upload time: 2024/11/27

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Product Details

Description

Features:

• Enhancement mode type
• High speed : tf = 0.19 s (typ.) (I_C = 50A)
• Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)

Specifications

Characteristics	Symbol	Rating	Unit
Collector-emitter voltage	V_CES	600	V
Gate-emitter voltage	V_GES	±25	V
Continuous collector @ Tc = 100 current @ Tc = 25	I_C	29	A
Continuous collector @ Tc = 100 current @ Tc = 25	I_C	50	A
Pulsed collector current	I_CP	100	A
Diode forward current DC Pulsed	I_F	20	A
Diode forward current DC Pulsed	I_FP	40	A
Collector power @ Tc = 100 dissipation @ Tc = 25	P_C	56	W
Collector power @ Tc = 100 dissipation @ Tc = 25	P_C	140	W
Junction temperature	Tj	150
Storage temperature range	Tstg	−55 to 150

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GT50J327

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