FQT3P20TF-NL, FQT459, FQT4N20L Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:SOT-223 D/C:07+
FQT3P20TF-NL, FQT459, FQT4N20L Datasheet download
Part Number: FQT3P20TF-NL
MFG: FAIRCHILD
Package Cooled: SOT-223
D/C: 07+
FQT3P20TF-NL, FQT459, FQT4N20L
- Table of contents:
Info of FQT3P20TF-NL
Info of FQT459
Info of FQT4N20L
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About FQT13N06
PDF/DataSheet Download
Datasheet: FQT13N06
File Size: 705156 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQT13N06
PDF/DataSheet Download
Datasheet: FQT13N06
File Size: 705156 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQT4N20L
PDF/DataSheet Download
Datasheet: FQT4N20L
File Size: 642585 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQT4N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
FQT4N20L Maximum Ratings
| Symbol | Parameter | FQT7N10 | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C) |
0.85 | A |
| 0.68 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.4 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 52 | mJ |
| IAR | Avalanche Current (Note 1) | 0.85 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 0.22 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C | 2.2 | W |
| 0.018 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
FQT4N20L Features
• 0.85A, 200V, RDS(on) = 1.35Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
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