FQT4N20L

Features:

• 0.85A, 200V, RDS(on) = 1.35Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical  6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers


Specifications

Symbol	Parameter	FQT7N10	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C)	0.85	A
		0.68	A
IDM	Drain Current - Pulsed (Note 1)	3.4	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
IAR	Avalanche Current (Note 1)	0.85	A
EAR	Repetitive Avalanche Energy (Note 1)	0.22	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.2	W
		0.018	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQT4N20L are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQT4N20L has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. FQT4N20L is well
suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.