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FQT4N20

Features: • 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V• Low gate charge ( typical 5.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• Improved dv/dt capabilitySpecifications Symbol Parameter FQT7N10 Units VDSS Drain-Source Voltage 200 V ID Drai...

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SeekIC No. : 004343343 Detail

FQT4N20: Features: • 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V• Low gate charge ( typical 5.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• Improved dv/dt capabilitySpeci...

FQT4N20 Data Sheet

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Part Number:
FQT4N20
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical  5.0 pF)
• Fast switching
• Improved dv/dt capability


Specifications

Symbol Parameter FQT7N10 Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 70°C)		 0.85 A
0.68 A
IDM Drain Current - Pulsed (Note 1) 3.4 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ
IAR Avalanche Current (Note 1) 0.85 A
EAR Repetitive Avalanche Energy (Note 1) 0.22 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C) - Derate above 25°C 2.2 W
0.018 W/°C
TJ, TSTG Operating and Storage Temperature Range
 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
 300 °C



Description

These N-Channel enhancement mode power field effect transistors of FQT4N20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQT4N20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQT4N20 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




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