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FQT3P20, FQT3P20TF, FQT4N20

Table of contents:
Info of FQT3P20
Info of FQT3P20TF
Info of FQT4N20

FQT3P20, FQT3P20TF, FQT4N20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FQT3P20, FQT3P20TF, FQT4N20 Datasheet download

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Part Number: FQT3P20

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET P-CH 200V 0.67A SOT-223

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FQT3P20 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQT3P20 Maximum Ratings

Symbol	Parameter	FQT7N10	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 70°C)	0.67	A
I_D		0.53	A
I_DM	Drain Current - Pulsed (Note 1)	-2.7	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	150	mJ
I_AR	Avalanche Current (Note 1)	0.67	A
E_AR	Repetitive Avalanche Energy (Note 1)	0.25	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.02	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQT3P20 Features

• -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• Improved dv/dt capability

FQT3P20TF Parameters

Technical/Catalog Information	FQT3P20TF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	670mA
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 335mA, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQT3P20TF FQT3P20TF

FQT4N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQT4N20 Maximum Ratings

Symbol	Parameter	FQT7N10	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 70°C)	0.85	A
I_D		0.68	A
I_DM	Drain Current - Pulsed (Note 1)	3.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
I_AR	Avalanche Current (Note 1)	0.85	A
E_AR	Repetitive Avalanche Energy (Note 1)	0.22	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	2.2	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.018	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQT4N20 Features

• 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• Improved dv/dt capability

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