FQT13N06L

Features:

• 2.8A, 60V, RDS(on) = 0.11Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical  17 pF)
• Fast switching
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQT7N10	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C)	2.8	A
		2.24	A
IDM	Drain Current - Pulsed (Note 1)	11.2	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	85	mJ
IAR	Avalanche Current (Note 1)	2.8	A
EAR	Repetitive Avalanche Energy (Note 1)	0.21	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.1	W
		0.017	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQT13N06L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQT13N06L has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. FQT13N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.